Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device

A substrate with a multilayer reflective film comprising:

• a substrate, a multilayer reflective film formed on the substrate, and a protective film formed on the multilayer reflective film,
• wherein:
• the protective film comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf), and
• a content of the at least one additive element is 1 atomic % or more and 20 atomic % or less.

A reflective mask blank comprising:

• a substrate, a multilayer reflective film formed on the substrate, a protective film formed on the multilayer reflective film, and
• an absorber film on the protective film,
• wherein:
• the protective film comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf), and
• a content of the rhodium (Rh) is 15 atomic % or more and 50 atomic % or less.

A reflective mask comprising:

• a substrate, a multilayer reflective film formed on the substrate, a protective film formed on the multilayer reflective film, and
• an absorber pattern in which an absorber film is patterned,
• wherein:
• the protective film comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf), and
• a content of the rhodium (Rh) is 15 atomic % or more and 50 atomic % or less.

A reflective mask blank comprising:

• a substrate, a multilayer reflective film formed on the substrate, a protective film formed on the multilayer reflective film;
• and
• an absorber film on the protective film,
• wherein:
• the protective film comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf), and
• a content of the at least one additive element is 1 atomic % or more and 20 atomic % or less.

A reflective mask comprising:

• a substrate, a multilayer reflective film formed on the substrate, a protective film formed on the multilayer reflective film;
• and
• an absorber pattern in which an absorber film is patterned,
• wherein:
• the protective film comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf), and
• a content of the at least one additive element is 1 atomic % or more and 20 atomic % or less.