Analysis method, storage medium, and manufacturing method of semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorYusuke Shimizu
Life of this patent
Estimating the term…
Abstract
Provided is an analysis method including acquiring measurement values of a characteristic of a plurality of semiconductor devices of a measurement group in which a concentration of a first impurity and an irradiation amount of a charged particle beam are included in a set range, generating a measurement distribution showing a distribution, in the measurement group, of the measurement values of the characteristic, generating a virtual distribution in which samples of the characteristic are distributed in a range that is wider than the measurement distribution by simulating, based on the measurement distribution, the characteristic of a plurality of the semiconductor devices that is virtual, and calculating a defect rate in the virtual distribution.
Claims22
A manufacturing method of a semiconductor device in which a semiconductor substrate comprises a first impurity and the semiconductor substrate is irradiated with a charged particle beam, the manufacturing method comprising:
- performing an analysis method for analyzing a defect rate of the semiconductor device, the analysis method comprising:
- acquiring measurement values of a characteristic of a plurality of the semiconductor devices in each of one or more measurement groups, wherein a concentration of the first impurity and an irradiation amount of the charged particle beam used in producing the plurality of the semiconductor devices in any one of the one or more measurement groups are from a corresponding set range included in a plurality of set ranges;
- generating a measurement distribution showing a probability distribution, for each of the one or more measurement groups, of the measurement values of the characteristic or a probability distribution, for each of the one or more measurement groups, of converted measurement values obtained by mathematically converting the measurement values of the characteristic such that the probability distribution of the converted measurement values at least approximates a normal distribution;
- generating a virtual distribution in which samples of the characteristic are distributed in a range that is wider than the measurement distribution by simulating, based on the measurement distribution, the characteristic of a corresponding one of a plurality of virtual groups of semiconductor devices;
- and
- calculating a defect rate in the virtual distribution;
- designing the semiconductor device by determining, based on the defect rate in each of the plurality of set ranges calculated with the analysis method, the irradiation amount of the charged particle beam against the semiconductor substrate to be used for subsequent manufacture of the semiconductor device;
- and
- manufacturing the semiconductor device by irradiating the semiconductor substrate with the charged particle beam of the irradiation amount determined in the designing.
A non-transitory, computer-readable storage medium having stored therein a program that when executed by a computer causes the computer to perform an analysis method of analyzing a defect rate of a semiconductor device that includes a semiconductor substrate comprising a first impurity, the semiconductor substrate to be irradiated with a charged particle beam during manufacture of the semiconductor device, the analysis method comprising:
- acquiring measurement values of a characteristic of a plurality of the semiconductor devices in each of one or more measurement groups, wherein a concentration of the first impurity and an irradiation amount of the charged particle beam used in producing the plurality of the semiconductor devices in any one of the one or more measurement groups are from a corresponding set range included in a plurality of set ranges;
- generating a measurement distribution showing a probability distribution, for each of the one or more measurement groups, of the measurement values of the characteristic or a probability distribution, for each of the one or more measurement groups, of converted measurement values obtained by mathematically converting the measurement values of the characteristic such that the probability distribution of the converted measurement values at least approximates a normal distribution;
- generating a virtual distribution in which samples of the characteristic are distributed in a range that is wider than the measurement distribution by simulating, based on the measurement distribution, the characteristic of a corresponding one of a plurality of virtual groups of semiconductor devices;
- and
- calculating a defect rate in the virtual distribution,
- wherein the defect rate in each of the plurality of set ranges calculated with the analysis method enables determination of the irradiation amount of the charged particle beam against the semiconductor substrate to be used for subsequent manufacture of the semiconductor device.
Dependencies are inferred from the claim text.