Halide-free co-reactants for molybdenum film deposition
AssigneeApplied Materials, Inc.
InventorsAndrea Leoncini, Chandan Kr Barik
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Abstract
Methods for depositing molybdenum-containing films on a semiconductor substrate are described. The substrate is exposed to a bis(arene)molybdenum (0) precursor and a halide-free reactant to form the molybdenum-containing film (e.g., molybdenum metal (elemental molybdenum), molybdenum carbide, molybdenum carbonitride, molybdenum silicide, molybdenum carbosilicide, molybdenum sulfide, molybdenum carbosulfide, molybdenum nitride, molybdenum phosphide, or molybdenum carbophosphide. The exposures can be sequential or simultaneous.
Claims20
A method of forming a molybdenum-containing film on a semiconductor substrate, the method comprising:
- exposing a substrate to a bis(arene)molybdenum (0) precursor having a general
- wherein Z is a substituent;
- and
- exposing the substrate to a halide-free reactant to form the molybdenum-containing film on the substrate, the halide-free reactant having less than 5% of halogen on an atomic basis and comprising one or more of an alkene, an imine, an amine, a nitrile, an ether, an ester, or a carbonyl.
A method of forming a molybdenum-containing film on a semiconductor substrate, the method comprising:
- forming the molybdenum-containing film in a process cycle comprising sequential exposure of a substrate to a bis(arene)molybdenum (0) precursor, purge gas, a halide-free reactant, and purge gas, the halide-free reactant having less than 5% of halogen on an atomic basis and comprising one or more of an alkene, an imine, an amine, a nitrile, an ether, an ester, or a carbonyl, and the bis(arene)molybdenum (0) precursor having a general formula (I)
- wherein Z is a substituent.
Dependencies are inferred from the claim text.