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US 12,590,364 B2Granted
Cyclical deposition methods
AssigneeASM IP Holding B.V.
InventorsTrigagema Gama, Ryu Nakano
Life of this patent
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Abstract
Methods for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.
Claims18
A cyclical deposition method comprising:
- providing a substrate within a reaction chamber;
- and
- depositing silicon oxide on the substrate, wherein a deposition cycle comprises:
- providing a first silicon precursor to the reaction chamber to form chemisorbed species;
- providing a second silicon precursor that reacts with the chemisorbed species;
- providing a reactant;
- and
- after the step of providing the second silicon precursor, forming a plasma using the reactant,
- wherein the first silicon precursor comprises at least two Si—N bonds,
- wherein the second silicon precursor comprises at least one independently selected —OR ligand selected from the group consisting of hydroxide (—OH), alkoxy (—OCxHy—), and siloxy (—OSiCwHz—), where x is between 1 and 8, y is between 3 and 11, w is between 3 and 24, and z is between 9 and 33,
- wherein at least one Si—N bond from the first precursor remains intact on a surface of the substrate after adsorption,]
- wherein, prior to forming a plasma using the reactant, the second precursor reacts with the at least one Si—N bond from the first precursor, and
- wherein multiple layers of silicon oxide are formed per deposition cycle.
10 more elements
A cyclical deposition method comprising:
- providing a substrate within a reaction chamber;
- and
- depositing silicon oxide on the substrate, wherein a deposition cycle comprises:
- providing a first silicon precursor to the reaction chamber;
- providing a second silicon precursor;
- and
- providing a non-reactant active species formed using a plasma,
- wherein the first silicon precursor comprises at least two Si—N bonds,
- wherein the second silicon precursor comprises two or more ligands independently selected from the group consisting of —OR ligands selected from the group consisting of hydroxide (—OH), alkoxy (—OCxHy—), and siloxy (—OSiCwHz—), where x is between 1 and 8, y is between 3 and 11, w is between 3 and 24, and z is between 9 and 33,
- wherein at least one Si—N bond from the first precursor remains intact on the surface of the substrate after adsorption,
- wherein, prior to providing a non-reactant active species formed using a plasma, the second precursor reacts with the at least one Si—N bond from the first precursor bond, and
- wherein multiple silicon oxide layers are formed per deposition cycle.
9 more elements
A cyclical deposition method comprising:
- providing a substrate within a reaction chamber;
- and
- depositing silicon oxide on the substrate, wherein a deposition cycle comprises:
- providing a first silicon precursor to the reaction chamber to form chemisorbed species;
- providing a second silicon precursor that reacts with the chemisorbed species;
- providing a reactant or a non-reactant;
- and
- after the step of providing the second silicon precursor, forming a plasma using the reactant or the non-reactant,
- wherein the first silicon precursor comprises two or more ligands independently selected from the group consisting of —NR2 ligands, wherein each R of each —NR2 ligand is independently selected from the group consisting of —CH3, —CH2CH3, —CH2CH2CH3, —CH2CH2CH2CH3, isopropyl (—CH(CH3)2), isobutyl, sec-butyl, tert-butyl, —SiH3, —Si(CH3)3, and H, where for at least one —NR2 ligand, if a first R═H, the second R≠H, or the first silicon precursor comprises at least two Si—N bonds,
- wherein the second silicon precursor comprises at least one Si—OR bond, wherein —OR group of the Si—OR bond is selected from the group consisting of hydroxide (—OH), alkoxy (—OCxHy—), and siloxy (—OSiCwHz—), where x is between 1 and 8, y is between 3 and 11, w is between 3 and 24, and z is between 9 and 33,
- wherein at least one Si—N bond from the first precursor remains intact on a surface of the substrate after absorption,
- wherein the second precursor reacts with the at least one Si—N bond of the first precursor, and
- wherein multiple silicon oxide layers are formed per deposition cycle.
10 more elements
Dependencies are inferred from the claim text.