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US 12,590,362 B2Granted
Deposition method and deposition apparatus
AssigneeTokyo Electron Limited
InventorsKatsumasa Yamaguchi, Tsubasa Yokoi
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Abstract
A film deposition method includes preparing a substrate having an insulating film formed thereon, forming a seed layer on the insulating film, and supplying a molybdenum-containing gas and a reducing gas to the substrate having the seed layer famed thereon, to foam a molybdenum film on the seed layer.
Claims11
A deposition method comprising:
- preparing a substrate having an insulating film formed thereon;
- forming a seed layer on the insulating film by exposing the substrate solely to a single process gas and causing the single process gas to be adsorbed on the insulating film;
- and
- supplying a molybdenum-containing gas and a reducing gas to the substrate having the seed layer formed thereon, to form a molybdenum film on the seed layer.
1 more element
A deposition method comprising:
- preparing a substrate having an insulating film formed thereon;
- forming a seed layer on the insulating film by exposing the substrate solely to one process gas composition and causing the one process gas composition to be adsorbed on the insulating film;
- and
- supplying a molybdenum-containing gas and a reducing gas to the substrate having the seed layer formed thereon, to form a molybdenum film on the seed layer.
1 more element
Dependencies are inferred from the claim text.