Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten

A cleaning composition, comprising at least the following components:

• (A) as solubilizer, one or more compounds of formula I:
• wherein R1 is selected from the group consisting of branched and unbranched alkyl having 1, 2, 3 or 4 carbon atoms;
• wherein the total amount of the one or more solubilizers (A) is in a range of from 1 mass-% to 15 mass-%, relative to the total mass of the cleaning composition;
• (B) one or more corrosion inhibitors, selected from the group consisting of benzotriazoles which are unsubstituted or substituted once or twice independently by branched or unbranched alkyl having 1, 2, 3 or 4 carbon atoms, aminoalkyl wherein the alkyl is branched or unbranched and has 1, 2, 3 or 4 carbon atoms, phenyl, thiophenyl, halogen, hydroxy, nitro and/or thiol, and mixtures thereof, wherein the total amount of the one or more corrosion inhibitors (B) is in a range of from 0.1 mass-% to 6 mass-%, relative to the total mass of the cleaning composition;
• (C) one or more polar, non-protogenic organic solvents selected from the group consisting of
• alkyl sulfone compounds of formula IV:
• wherein
• R5 is a branched or unbranched alkyl group having 1 to 5 carbon atoms,
• R6 is a branched or unbranched alkyl group having 1 to 5 carbon atoms,
• or
• R5 and R6 together form a branched or unbranched alkylene group having 3 to 5 carbon atoms, wherein one or two carbon atoms of said alkylene group can independently be substituted by —O—R7, wherein R7 is a branched or unbranched alkyl group having 1 to 4 carbon atoms;
• and
• (D) water,
• wherein the one, or more, polar, non-protogenic organic solvents (C) is present in the range of from >30 mass-% to 50 mass-% relative to the total mass of the cleaning composition;
• wherein the total amount of etchants comprising fluoride anions is <0.001 mass-%, relative to the total mass of the cleaning composition.