Etching composition, method of etching metal-containing film by using the same, and method of preparing semiconductor device by using the same

An etching composition comprising:

• an oxidizing agent;
• an ammonium salt;
• an aqueous solvent;
• and
• an accelerator, wherein
• the oxidizing agent includes hydrogen peroxide, and an amount of the oxidizing agent is 15 wt % to 25 wt % based on 100 wt % of the etching composition,
• the ammonium salt includes an ammonium cation and an organic anion,
• the etching composition does not include a fluorine-containing compound, and
• the accelerator includes a compound represented by Formula 1-1, a compound represented by Formula 1-2, a compound represented by Formula 1-3, a compound represented by Formula 1-4, a compound represented by Formula 1-5, a compound represented by Formula 1-6, a compound represented by Formula 1-7, a compound represented by Formula 1-8, or any combination thereof,
• wherein, in Formulae 1-1 to 1-8,
• CY1 is a C3-C8 saturated cyclic group,
• X1 is C or N,
• X2 is C(R2), N(R2), O, S or N(H),
• X1 and X2 are linked to each other via a single bond,
• X3 is C(Z)(Z2), N(Z1), C(═O) or C(═S),
• X4 is C(Z11)(Z12), N(Z11), C(═O) or C(═S),
• X5 is C(Z1) or N,
• X6 is C(Z11) or N,
• Y1 is C(Z3)(Z4), N(Z3), C(═O) or C(═S),
• T1 is *—OH, *—SH, or *—NH2,
• T1a is O or S,
• R2 is *—O(Z5), *—S(Z5), or *—N(Z5)(Z6),
• Z1 to Z6, Z11, and Z12 are each independently,
• hydrogen, deuterium, *—Cl, *—Br, *—I, *—OH, *—SH, *—NH2, *—C(═O)H, *—C(═S)H, *—C(═O)—OH, *—C(═S)—OH, *—C(═O)—SH, *—C(═S)—SH, *—C(═O)—(NH2), *—C(═S)—(NH2), *—NH—C(═O)—(NH2), *—NH—C(═S)—(NH2), *—C(OH)—C(═O)—OH, *—C(SH)—C(═O)—OH, *—C(OH)—C(═S)—OH, *—C(OH)—C(═O)—SH, *—C(SH)—C(═S)—OH, *—C(SH)—C(═O)—SH, *—C(OH)—C(═S)—SH, *—C(SH)—C(═S)—SH, *—C(═O)—C(═O)—OH, *—C(═S)—C(═O)—OH, *—C(═O)—C(═S)—OH, *—C(═O)—C(═O)—SH, *—C(═S)—C(═S)—OH, *—C(═S)—C(═O)—SH, *—C(═O)—C(═S)—SH, *—C(═S)—C(═S)—SH, or *—C(═O)—ONH4;
• or
• a C1-C20 alkyl group, a C2-C20 alkenyl group, a C1-C20 alkoxy group, a C6-C20 aryl group, or a C2-C20 heteroaryl group, unsubstituted or substituted with deuterium, *—Cl, *—Br, *—I, *—OH, *—SH, *—NH2, *—C(═O)H, *—C(═S)H, *—C(═O)—OH, *—C(═S)—OH, *—C(═O)—SH, *—C(═S)—SH, *—C(═O)—(NH2), *—C(═S)—(NH2), *—NH—C(═O)—(NH2), *—NH—C(═S)—(NH2), *—C(OH)—C(═O)—OH, *—C(SH)—C(═O)—OH, *—C(OH)—C(═S)—OH, *—C(OH)—C(═O)—SH, *—C(SH)—C(═S)—OH, *—C(SH)—C(═O)—SH, *—C(OH)—C(═S)—SH, *—C(SH)—C(═S)—SH, *—C(═O)—C(═O)—OH, *—C(═S)—C(═O)—OH, *—C(═O)—C(═S)—OH, *—C(═O)—C(═O)—SH, *—C(═S)—C(═S)—OH, *—C(═S)—C(═O)—SH, *—C(═O)—C(═S)—SH, *—C(═S)—C(═S)—SH, *—C(═O)—ONH4, or any combination thereof,
• a1 is an integer from 0 to 5,
• A1 is,
• hydrogen or deuterium;
• or
• a C1-C20 alkyl group, a C2-C20 alkenyl group, a C1-C20 alkoxy group, a C6-C20 aryl group, or a C2-C20 heteroaryl group, unsubstituted or substituted with deuterium, *—Cl, *—Br, *—I, a C1-C20 alkyl group, a C1-C20 alkoxy group, or any combination thereof, and
• * indicates a binding site to a neighboring atom.