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AssigneeThe Board of Trustees of the University of Illinois
InventorsHee-Sun Han, Joonhyuck Park
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Provided herein are methods of making a high-quality quantum dot (QD), including by providing anion precursor chemistry that enables chemical modulation of precursor reactivity, thereby, allowing independent optimization of reaction temperature and precursor reactivity to systematically grow high quality QDs and by providing specially configured tunable precursors and related chemistry to facilitate separate reaction pathways for nucleation and growth, thereby accessing heat-up based synthesis of high-quality QD, including core-shell QDs. The methods may include providing a base-QD and a first anion or cation precursor having a composition comprising an anion or a cation element, respectively, and a modification agent. At least one add-layer is grown on the base-QD at a growth temperature, thereby making the high-quality QD comprising the base-QD and the at least one add-layer. At least one add-layer may have a composition comprising an add-layer cation element and an add-layer anion element.
A method of making a high-quality quantum dot (QD), the method comprising the steps of:
A method of making a high-quality quantum dot (QD), the method comprising the steps of:
A method of making a high-quality quantum dot (QD), the method comprising the steps of:
Dependencies are inferred from the claim text.