Compensation method for wafer bonding

A compensation method for wafer bonding, comprising:

• bonding a first wafer and a second wafer, wherein the first wafer has a first conductive pad, and the second wafer has a second conductive pad;
• performing a first process to the first wafer and the second wafer, wherein prior to performing the first process, the first conductive pad has a first position, and a first shift is between the first position and an ideal position, and wherein after performing the first process, the first conductive pad has a second position, and a second shift is between the second position and the first position, wherein the ideal position is a position of the first conductive pad under a condition where the first wafer is not distorted during manufacturing process;
• performing a second process to the second wafer, wherein after performing the second process, the first conductive pad has a third position, and a third shift is between the third position and the second position;
• performing a first compensation method to produce a compensated first wafer and a compensated second wafer, the first compensation method comprising defining a position of a first conductive pad of the compensated first wafer, wherein the position of a first conductive pad of the compensated first wafer is determined by the first shift, the second shift, and the third shift;
• and
• bonding the compensated first wafer and the compensated second wafer.