Semiconductor device

A semiconductor device comprising:

• a first lead frame, a second lead frame, and a third lead frame;
• a first transistor provided on the first lead frame and having a first terminal electrically connected to the first lead frame;
• a second transistor provided on the second lead frame and having a first terminal electrically connected to the third lead frame;
• a third transistor provided on the third lead frame and having a first terminal electrically connected to the third lead frame and a second terminal electrically connected to a second terminal of the first transistor;
• a fourth transistor provided on the second lead frame and having a first terminal electrically connected to the second lead frame and a second terminal electrically connected to a second terminal of the second transistor;
• a capacitor having a first terminal electrically connected to the first lead frame and a second terminal electrically connected to the second lead frame;
• and
• a sealing resin configured to seal the first transistor, the second transistor, the third transistor, the fourth transistor, and the capacitor;
• wherein
• the first transistor and the second transistor are GaN transistors, the third transistor and the fourth transistor are MOS transistors, and
• the first transistor, the third transistor, the second transistor, and the fourth transistor are arranged side by side in this order in a first direction.