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US 12,588,554 B2Granted
Semiconductor device and method forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Jung Chen, Tsung-Fu Tsai, Szu-Wei Lu, Chung-Shi Liu
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Abstract
Integrated circuit package structures and methods of forming integrated circuit package structures are discussed. An integrated circuit package structure, in accordance with some embodiments, includes an integrated circuit package substrate with a heterogeneous bonding scheme that includes conductive pillars for bonding semiconductor devices to as well as a region including conductive connectors embedded in a dielectric for bonding additional semiconductor devices.
Claims20
A method comprising:
- depositing a photoresist layer over a dielectric layer and over a set of conductive connectors, the set of conductive connectors including a first subset of conductive connectors and a second subset of conductive connectors different from the first subset;
- patterning the photoresist layer to expose the first subset of conductive connectors, while leaving the second subset of conductive connectors unexposed;
- forming a metal seed layer on the photoresist layer and on the exposed first subset of conductive connectors;
- depositing a metal layer on the metal seed layer;
- planarizing the metal layer to be coplanar with the photoresist layer;
- removing the photoresist layer and portions of the metal layer overlying the photoresist layer to form conductive pillars on the first subset of conductive connectors, the conductive pillars making physical contact with a first subset of the conductive connectors;
- attaching a first semiconductor component directly to the dielectric layer;
- and
- attaching a second semiconductor component to the conductive pillars.
6 more elements
A method comprising:
- forming conductive pillars on a first subset of conductive connectors, the conductive connectors being embedded in a dielectric layer;
- adhering by a hybrid bond a first semiconductor device to a second subset of the conductive connectors;
- and
- utilizing a first under-bump metallization joint to adhere a second semiconductor device to the conductive pillars;
- and
- depositing an underfill material, wherein the underfill material encompasses the second semiconductor device.
3 more elements
A method comprising:
- embedding conductive connectors in a dielectric layer, the dielectric layer being formed over an interposer;
- forming conductive pillars in direct physical contact with a first subset of the conductive connectors;
- provisioning a first semiconductor device in direct physical contact with a second subset of the conductive connectors;
- provisioning a second semiconductor device in direct physical contact with the conductive pillars;
- and
- provisioning a third semiconductor device in direct physical contact with the conductive pillars.
3 more elements
Dependencies are inferred from the claim text.