Multi-chip semiconductor switching device

A semiconductor device, comprising:

• first and second insulating plates;
• a plurality of first semiconductor chips, each of which includes a first control electrode and a first output electrode on a front surface thereof and a first input electrode on a rear surface thereof;
• a plurality of second semiconductor chips, each of which includes a second control electrode and a second output electrode on a front surface thereof and a second input electrode on a rear surface thereof;
• a first input circuit pattern on which the first input electrodes of the plurality of first semiconductor chips are disposed;
• a first control circuit pattern electrically connected to the first control electrodes;
• a second input circuit pattern on which the second input electrodes of the plurality of second semiconductor chips are disposed;
• a second control circuit pattern electrically connected to the second control electrodes;
• a first resistive element and a first resistive circuit pattern having the first resistive element thereon, the first control electrodes and the first resistive element being electrically connected via the first control circuit pattern;
• a second resistive element and a second resistive circuit pattern having the second resistive element thereon, the second control electrodes and the second resistive element being electrically connected via the second control circuit pattern;
• and
• a first inter-board wiring member, at least one of the first output electrodes and at least one of the second output electrodes being electrically connected to each other via the first inter-board wiring member, wherein
• the first input circuit pattern, the first control circuit pattern and the first resistive circuit pattern are disposed on the first insulating plate, with the first input circuit pattern and the first resistive circuit pattern being spaced apart from each other,
• the second input circuit pattern, the second control circuit pattern, and the second resistive circuit pattern are disposed on the second insulating plate, with the second input circuit pattern and the second resistive circuit pattern being spaced apart from each other,
• the first insulating plate has a rectangular shape in a plan view of the semiconductor device and has a first side, a second side, a third side, and a fourth side in this order around the first insulating plate,
• the first control circuit pattern is formed on the front surface of the first insulating plate, closer to the first side than to the third side,
• the first resistive circuit pattern is formed closer to the first side than to the third side of the first insulating plate and closer than the first control circuit pattern to the second side,
• the second insulating plate has a rectangular shape in the plan view and has a fifth side, a sixth side, a seventh side, and an eighth side in this order around the second insulating plate,
• the second control circuit pattern is formed on the front surface of the second insulating plate, closer to the fifth side than to the seventh side, and
• the second resistive circuit pattern is formed on the second insulating plate, closer to the fifth side than to the seventh side and closer than the second control circuit pattern to the eighth side.