Integrated circuit interconnect with embedded die

An integrated circuit comprising:

• a plurality of first interconnect layers;
• a die in the plurality of first interconnect layers, such that at least first and second horizontal interconnect layers of the plurality of first interconnect layers are arranged with the second horizontal interconnect layer over the first horizontal interconnect layer and are arranged laterally adjacent to a side of the die, the die including a semiconductor base having a first surface and an opposite second surface, and one or more second interconnect layers above the first surface of the semiconductor base;
• first electrical connections directly between the die and one or more of the plurality of first interconnect layers below the die;
• and
• second electrical connections directly between the second surface of the semiconductor base and one or more of the plurality of first interconnect layers above the die.

An integrated circuit comprising:

• a first die including a first semiconductor base and an interconnect structure on the first semiconductor base, wherein each of one or more outer edges of the interconnect structure is coplanar with a corresponding outer edge of the semiconductor base, the interconnect structure including a plurality of interconnect layers, and the first semiconductor base including a first plurality of transistors;
• and
• a second die in the interconnect structure, the second die including a second semiconductor base and layers of interconnect, the second semiconductor base including a second plurality of transistors;
• wherein the interconnect structure includes first and second horizontal interconnect layers, the second horizontal interconnect layer arranged over the first horizontal interconnect layer and arranged laterally adjacent to the second die, and the interconnect structure includes one or more interconnect layers above the second die.