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US 12,588,539 B2Granted
Semiconductor device, method for manufacturing same, and electric power converter
AssigneeMitsubishi Electric Corporation
InventorYuji Sato
Life of this patent
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Abstract
In a semiconductor device, a first structure including a first uneven unit and a second structure covering the first structure and including a second uneven unit are formed in a bonding region defined in a semiconductor substrate. Metal wiring is joined to the second uneven unit in the second structure. A depth of a recess in the second uneven unit is shallower than a depth of a recess in the first uneven unit. An insulating member defining the bonding region is formed so as to reach the semiconductor substrate.
Claims16
A semiconductor device comprising:
- a semiconductor substrate on which a semiconductor element is formed;
- a bonding region defined in the semiconductor substrate;
- an insulating member formed so as to be in contact with the semiconductor substrate and defining the bonding region;
- a first structure including a first uneven unit and formed in the bonding region;
- a second structure including a second uneven unit and formed so as to cover the first structure;
- and
- a metal wiring joined to the second uneven unit in the second structure,
- wherein a depth of a recess in the second uneven unit is shallower than a depth of a recess in the first uneven unit,
- wherein the insulating member is formed so as to surround the first structure and the second structure, and
- wherein the bonding region is partitioned by the insulating member into;
- a first region having a first area;
- and
- a second region having a second area.
10 more elements
A semiconductor device comprising:
- a semiconductor substrate on which a semiconductor element is formed;
- a bonding region defined in the semiconductor substrate;
- a first structure including a first uneven unit and formed in the bonding region;
- an intermediate structure formed on the first structure;
- a second structure including a second uneven unit and formed so as to cover the first structure and the intermediate structure;
- and
- a metal wiring joined to the second uneven unit in the second structure,
- wherein a depth of a recess in the second uneven unit is shallower than a depth of a recess in the first uneven unit;
- and
- wherein a width of the recess in the second uneven unit is less than a width of the recess in the first uneven unit.
7 more elements
Dependencies are inferred from the claim text.