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US 12,588,538 B2Granted
Semiconductor device having wired under bump structure and method therefor
AssigneeNXP B.V.
InventorsKuan-Hsiang Mao, Shu-Han Yang, Pey Fang Hiew, Wen Hung Huang
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Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over an active side of a semiconductor die. A die pad of the semiconductor die is connected to an interconnect segment of the RDL by way of a bond wire. An encapsulating layer is formed over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer.
Claims18
A method comprising:
- forming a redistribution layer (RDL) over an active side of a semiconductor die;
- connecting a die pad of the semiconductor die with an interconnect segment of the RDL by way of a bond wire, wherein the interconnect segment of the RDL includes a wiring pad region, an under-bump region, and a trace portion connecting the wiring pad region with the under-bump region;
- and
- forming an encapsulating layer over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer.
1 more element
A semiconductor device comprising:
- a redistribution layer (RDL) formed over an active side of a semiconductor die, the RDL including an interconnect segment;
- a die pad of the semiconductor die connected to the interconnect segment by way of a bond wire;
- an encapsulating layer formed over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer;
- and
- a non-conductive layer disposed between a passivation layer of the semiconductor die and the RDL.
2 more elements
A method comprising:
- forming a redistribution layer (RDL) over an active side of a semiconductor die, an interconnect segment of the RDL including a wiring pad region, an under-bump region, and a trace portion connecting the wiring pad region with the under-bump region;
- connecting a die pad of the semiconductor die with the wiring pad region of the interconnect segment by way of a bond wire;
- and
- forming an encapsulating layer over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer.
1 more element
Dependencies are inferred from the claim text.