Dielectric interposer with electrical-connection cut-in
AssigneeMicron Technology, Inc.
InventorsChin Hui Chong, Seng Kim Ye, Hong Wan Ng, Kelvin Aik Boo Tan
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AssigneeMicron Technology, Inc.
InventorsChin Hui Chong, Seng Kim Ye, Hong Wan Ng, Kelvin Aik Boo Tan
Estimating the term…
Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a base layer, a dielectric interposer coupled to the base layer and including a first outer surface facing the base layer and an opposing second outer surface facing away from the base layer and spaced apart from the first outer surface in a direction, a first electrical-connection cut-in in the second outer surface that extends, in the direction, toward the first outer surface, and one or more first electrical connections disposed within the first electrical-connection cut-in such that at least a portion of the one or more first electrical connections does not extend, in the direction, beyond the second outer surface.
A semiconductor device assembly, comprising:
A semiconductor package, comprising:
A memory device, comprising:
A semiconductor device, comprising:
A semiconductor package, comprising:
Dependencies are inferred from the claim text.