Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsEitaro Miyake, Fumiyoshi Kawashiro
Life of this patent
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Abstract
According to one embodiment, there is provided a semiconductor device including a chip, and a gate electrode connected to a gate electrode pad provided on the chip. The gate electrode includes an external exposed portion having an external exposed surface that is flush with an external exposed surface of a sealing resin, and a gate electrode pad connection portion continuous with the external exposed portion and connected to the gate electrode pad, the gate electrode pad connection portion including a portion sandwiched between the gate electrode pad and a part of the sealing resin.
Claims15
A semiconductor device comprising:
- a chip having a source electrode pad and a gate electrode pad on a surface of the chip;
- a source electrode on the source electrode pad, the source electrode having first and second surfaces that are respectively on opposite sides of the source electrode, the first surface being connected to the source electrode pad, the second surface including an exposed surface that overlaps the chip in a first direction perpendicular to the surface of the chip;
- and
- a gate electrode connected to the gate electrode pad provided on the chip, the gate electrode including:
- an external exposed portion having an external exposed surface that is flush with an external exposed surface of a sealing resin, and
- a connection portion connected to the external exposed portion and connected to the gate electrode pad, the connection portion including a portion sandwiched between the gate electrode pad and a part of the sealing resin,
- wherein the external exposed portion extends away from the connection portion in a second direction perpendicular to the first direction and has a first length in the second direction and a second length in a third direction perpendicular to the first and second directions,
- wherein the connection portion extends away from the external exposed portion in the third direction and has a third length in the third direction and a fourth length in the second direction,
- wherein the first length is longer than the third length and the fourth length, and
- wherein the second length is longer than the third length and the fourth length.
A semiconductor device comprising:
- a chip having a source electrode pad and a gate electrode pad on a surface of the chip;
- a source electrode on the source electrode pad, the source electrode having first and second surfaces that are respectively on opposite sides of the source electrode, the first surface being connected to the source electrode pad, the second surface including an exposed surface that overlaps the chip in a first direction perpendicular to the surface of the chip;
- a drain electrode provided on a second surface side of the chip and having a drain electrode terminal on a first surface side of the chip;
- and
- a gate electrode connected to the gate electrode pad provided on the chip, the gate electrode including:
- an external exposed portion having an external exposed surface that is flush with an external exposed surface of a sealing resin, and
- a connection portion connected to the external exposed portion and connected to the gate electrode pad, the connection portion being located between the gate electrode pad and the sealing resin,
- wherein the external exposed portion extends away from the connection portion in a second direction perpendicular to the first direction and has a first length in the second direction and a second length in a third direction perpendicular to the first and second directions,
- wherein the connection portion extends away from the external exposed portion in the third direction and has a third length in the third direction and a fourth length in the second direction,
- wherein the first length is longer than the third length and the fourth length, and
- wherein the second length is longer than the third length and the fourth length.
Dependencies are inferred from the claim text.