Semiconductor device with reinforced dielectric and method therefor

A semiconductor device comprising:

• a semiconductor die having a die pad;
• a redistribution layer (RDL) formed over the semiconductor die, a portion of the RDL connected the die pad;
• a non-conductive layer formed over the RDL;
• an opening formed in the non-conductive layer, the opening exposing a portion of the RDL;
• a plurality of plateau regions formed in the non-conductive layer, a cavity region in the non-conductive layer separates each plateau region of the plurality of plateau regions, the cavity region extending less than a full thickness of the non-conductive layer;
• and
• a metal layer formed over the non-conductive layer and exposed portion of the RDL, the plurality of plateau regions exposed through the non-conductive layer, and the metal layer substantially filling the cavity region.

A method comprising:

• depositing a first non-conductive layer over a semiconductor die;
• forming a first opening in the first non-conductive layer, the first opening exposing a portion of a die pad of the semiconductor die;
• forming a redistribution layer (RDL) over the first non-conductive layer, a portion of the RDL contacting the exposed portion of the die pad;
• depositing a second non-conductive layer over the RDL;
• forming a second opening in the second non-conductive layer, the second opening exposing a portion of the RDL;
• forming a plurality of plateau regions in the second non-conductive layer, a cavity region in and extending less than a thickness of the second non-conductive layer separating each plateau region of the plurality of plateau regions;
• depositing a metal layer over the second non-conductive layer and exposed portion of the RDL;
• and
• etching the metal layer to expose the plurality of plateau regions through the metal layer, the cavity region remaining substantially filled by a first portion of the metal layer.