Methods and apparatus for integrating carbon nanofiber into semiconductor devices using W2W fusion bonding
AssigneeMicron Technology, Inc.
InventorsWei Zhou, Bret K. Street, Amy R. Griffin
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Abstract
A semiconductor device assembly that includes carbon nanofibers (CNFs) for heat dissipation has a CNF layer. Molding compound encapsulates the CNF layer to form an encapsulated CNF layer. The molding compound extends between individual adjacent CNFs within the encapsulated CNF layer, and upper edges of at least a portion of individual CNFs within the encapsulated CNF layer are exposed along an upper surface of the encapsulated CNF layer. The upper surface of the CNF layer is removably attached to a bottom surface of a carrier wafer.
Claims14
A semiconductor device assembly including carbon nanofibers for heat dissipation, comprising:
- a carbon nanofiber (CNF) layer;
- molding compound encapsulating the CNF layer to form an encapsulated CNF layer, the molding compound extending between individual adjacent CNFs within the encapsulated CNF layer;
- a metal seed layer extending across and in direct contact with a bottom surface of the encapsulated CNF layer;
- a silicon oxide (SiO) layer extending across and in direct contact with a bottom surface of the metal seed layer;
- and
- a plurality of die stacks formed over a device wafer, wherein the plurality of die stacks are encapsulated in second molding compound, wherein upper surfaces of the die stacks and the second molding compound are bonded to the SiO layer.
A semiconductor device assembly including carbon nanofibers for heat dissipation, comprising:
- a carbon nanofiber (CNF) layer;
- molding compound encapsulating the CNF layer to form an encapsulated CNF layer, the molding compound extending between individual adjacent CNFs within the encapsulated CNF layer, and wherein upper edges of at least a portion of individual CNFs within the encapsulated CNF layer are exposed along an upper surface of the encapsulated CNF layer;
- a metal seed layer extending across and in direct contact with a bottom surface of the encapsulated CNF layer;
- a silicon oxide (SiO) layer extending across a bottom surface of the metal seed layer;
- and
- a die stack formed over a memory device, wherein the die stack includes at least two dies that are attached to each other, wherein the die stack is encapsulated in second molding compound, wherein an upper surface of the die stack and the molding compound is bonded to the SiO layer.
Dependencies are inferred from the claim text.