Tight pitch directional selective via growth
AssigneeInternational Business Machines Corporation
InventorsNicholas Anthony Lanzillo, Koichi Motoyama, Ruilong Xie
Life of this patent
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Abstract
A semiconductor interconnect structure and formation thereof. The semiconductor interconnect structure includes a subtractively formed via located on top of a lower level metal line. The subtractively formed via has a bottom portion and a top portion. The semiconductor interconnect structure further includes a selectively grown region formed onto the top portion of the subtractively formed via. A portion of the selectively grown region overhangs the bottom portion of the subtractively formed via in one or more directions.
Claims18
A semiconductor interconnect structure, comprising:
- a via located on top of a lower level metal line, wherein the via includes a bottom portion and a top portion;
- and
- an arc-shaped region located on the top portion of the via, wherein the arc-shaped region overhangs the bottom portion of the via, and wherein the arc-shaped region is visible from a top view of the semiconductor interconnect structure.
A method of forming a semiconductor interconnect structure, comprising:
- forming a via on top of a lower level metal line, wherein the via includes a bottom portion and a top portion;
- and
- forming an arc-shaped region on the top portion of the via, wherein the arc-shaped region overhangs the bottom portion of the via, and wherein the arc-shaped region is visible from a top view of the semiconductor interconnect structure.
Dependencies are inferred from the claim text.