Backside diffusion break

A method for making a semiconductor component, the method comprising:

• forming an opening between two transistor gates such that the opening is delimited by an uppermost surface that is substantially coplanar with an uppermost surface of a region of source/drain material of one of the two transistor gates and such that the opening is open through a region of backside interlayer dielectric material;
• filling the opening with dielectric material to form a diffusion break having a lowermost surface that is substantially coplanar with a lowermost surface of the region of backside interlayer dielectric material;
• and
• forming a backside contact in direct contact with one of the two transistor gates and having a lowermost surface that is substantially coplanar with the lowermost surface of the diffusion break.

A method of forming a semiconductor component, the method comprising:

• removing one of a plurality of regions of source/drain material to form an opening delimited by an uppermost surface that is substantially coplanar with an uppermost surface of a remaining region of source/drain material;
• filling the opening with dielectric material to form a diffusion break having a lowermost surface that is substantially coplanar with a lowermost surface of a region of backside interlayer dielectric material;
• and
• forming a backside interconnect in direct contact with the lowermost surface of the diffusion break.

A method of forming a semiconductor component, the method comprising:

• forming a frontside contact in direct contact with a first region of source/drain material of a plurality of regions of source/drain material;
• removing a second region of source/drain material of the plurality of regions of source/drain material to form an opening delimited by an uppermost surface that is substantially coplanar with an uppermost surface of the first region of source/drain material;
• and
• filling the opening with dielectric material to form a diffusion break having a lowermost surface that is substantially coplanar with a lowermost surface of a backside contact that is in direct contact with a third region of source/drain material of the plurality of regions of source/drain material.