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US 12,588,481 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorMengkai Zhu
Life of this patent
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Abstract
A semiconductor device includes: a substrate having a first semiconductor layer, an insulating layer, and a second semiconductor layer; an active device on the substrate; an interlayer dielectric (ILD) layer on the active device; a first contact plug in the ILD layer and electrically connected to the active device; and a second contact plug in the ILD layer and the insulating layer, wherein a top surface of the second contact plug is higher than a top surface of the ILD layer.
Claims10
A semiconductor device, comprising:
- a substrate, wherein the substrate comprises a first semiconductor layer, an insulating layer, and a second semiconductor layer;
- an active device on the substrate;
- an interlayer dielectric (ILD) layer on the active device;
- a first contact plug in the ILD layer and electrically connected to the active device;
- an inter-metal dielectric (IMD) layer on the first contact plug and the ILD layer;
- and
- a second contact plug extending from the IMD layer, through the ILD layer, to the insulating layer, wherein a top surface of the second contact plug is higher than a top surface of the ILD layer and lower than a top surface of the IMD layer and the second contact plug has a constant width throughout.
4 more elements
Dependencies are inferred from the claim text.