Method of fabricating semiconductor device including organic and silicon oxide layers

A method of fabricating a semiconductor device, comprising:

• forming, on a titanium nitride layer, an organic layer comprising an acid-precursor and an amine;
• forming a trench that exposes the titanium nitride layer by etching the organic layer;
• providing a first precursor comprising an alkoxy group and silicon;
• and
• forming a silicon oxide layer on the organic layer,
• wherein the forming of the silicon oxide layer comprises forming a first material comprising a silanol by using hydrogen ions produced from the organic layer and the first precursor and forming a second material comprising siloxane using the first material and the amine of the organic layer.

A method of fabricating a semiconductor device, comprising:

• providing a substrate comprising a first region and a second region;
• forming a first sheet pattern on the substrate in the first region;
• forming a second sheet pattern on the substrate in the second region;
• forming, on the substrate, a work function metal layer surrounding the first sheet pattern and the second sheet pattern;
• forming, on the substrate, a sacrificial layer covering the first sheet pattern and the second sheet pattern and comprising an acid-precursor and an amine;
• forming, between the first sheet pattern and the second sheet pattern, a trench penetrating the sacrificial layer, the trench exposing the work function metal layer;
• and
• forming, on the sacrificial layer, a protective film comprising silicon oxide,
• wherein the protective film covers a surface of the sacrificial layer and the work function metal layer is exposed between the protective film within the trench.