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US 12,588,462 B2Granted
Semiconductor structure and fabrication method thereof
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorJi He Huang
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Abstract
A semiconductor structure includes a substrate; a top metal layer disposed in a top inter-metal dielectric (IMD) layer on the substrate; a first passivation layer covering the top metal layer and the top IMD layer; a pad layer disposed on the first passivation layer and electrically connected to the top metal layer; a spin-on glass (SOG) layer covering the pad layer and the first passivation layer; and a second passivation layer disposed on the SOG layer.
Claims10
A semiconductor structure, comprising:
- a substrate;
- at least two top metal layers disposed in a top inter-metal dielectric (IMD) layer on the substrate;
- a first passivation layer covering the at least two top metal layers and the top IMD layer;
- at least two pad layers disposed on the first passivation layer and electrically connected to the at least two top metal layers, respectively;
- a recessed region disposed between the at least two pad layers and extended into the first passivation layer;
- a spin-on glass (SOG) layer covering the pad layer and the first passivation layer and filled into the recessed region;
- and
- a second passivation layer disposed on the SOG layer, wherein the SOG layer is in direct contact with the at least two pad layers.
5 more elements
Dependencies are inferred from the claim text.