A cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process using a polishing liquid containing abrasive particles, wherein the cleaning liquid comprises:
- A) a component that is at least one selected from the group consisting of an amino alcohol, an alicyclic amine compound, and a monoamine compound other than the amino alcohol and the alicyclic amine compound, a first acidity constant of a conjugated acid of the component A being not less than 8.0;
- B) an anticorrosive agent represented by the following Formula (1)
- where X1 and X2 each independently represent a hydrophilic group, X3 to X6 each independently represent a hydrogen atom or a substituent, and at least one of X3 to X6 represents a hydrophilic group, and adjacent two of X3 to X6 may be bonded together to form a ring that may have a substituent, and the anticorrosive agent is at least one selected from the group consisting of 4-hydroxyphthalic acid, 4-aminophthalic acid, 4-sulfophthalic acid, 2,5-dihydroxybenzoic acid, 5-aminosalicylic acid, 4-hydroxyisophthalic acid, anthranilic acid derivatives in which X1 represents an amino group and X2 represents a carboxyl group, o-aminophenol derivatives in which X1 represents a hydroxy group and X2 represents an amino group, and 1,3-phenylenediamine-4-sulfonic acid;
- C) a chelating agent that is a compound having at least one coordination group selected from the group consisting of a carboxyl group and a phosphonic acid group;
- and
- D) 60 to 99 mass % water based on a total mass of the cleaning liquid, wherein the cleaning liquid has a pH of from 8.5 to 12.0 at 25° C., and
- the cleaning liquid satisfies Condition 1 that a product of a contact angle ratio obtained by a test method 1 and a specific degree of agglomeration obtained by a test method 2 is not more than 15, wherein the test method 1 is that:
- an object substrate having on its surface a metal film made of copper is subjected to a pretreatment for the metal film using an acid, whereafter a static contact angle of the metal film having undergone the pretreatment with respect to water is measured by a sessile drop method to obtain a first contact angle (°);
- separately, the object substrate is subjected to the pretreatment for the metal film using the acid, whereafter the metal film having undergone the pretreatment is allowed to contact the cleaning liquid for 1 minute;
- subsequently, a drying treatment is carried out for drying a surface of the metal film by spraying nitrogen gas thereto;
- a static contact angle of the metal film with respect to water is measured by the sessile drop method within 3 minutes after the surface of the metal film is dried through the drying treatment, thus obtaining a second contact angle (°);
- and a ratio of the second contact angle to the first contact angle is calculated to obtain the contact angle ratio,
- and the test method 2 is that:
- copper(II) chloride is added to the polishing liquid such that a concentration of Cu+2 ions is 0.03 mM in the polishing liquid;
- the copper(II) chloride is dissolved in the polishing liquid and allowed to stand for 30 seconds, whereafter the polishing liquid is added to the cleaning liquid such that an amount of the added polishing liquid is 1 mass % based on a total mass of the cleaning liquid;
- the cleaning liquid is stirred to disperse the abrasive particles and then allowed to stand for 30 seconds, whereafter the abrasive particles are taken out from the cleaning liquid;
- an average secondary particle size of the abrasive particles taken out is measured;
- and a ratio of the average secondary particle size of the abrasive particles taken out from the cleaning liquid to an average secondary particle size of the abrasive particles contained in the polishing liquid before the copper(II) chloride is added is calculated to obtain the specific degree of agglomeration.