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US 12,588,447 B2Granted
Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorTakayuki Katsunuma
Life of this patent
Estimating the term…
Abstract
An etching method includes: (a) providing a substrate including an etching target film and a mask on the etching target film; (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching target film.
Claims18
An etching method comprising:
- (a) providing a substrate including an etching target film and a mask on the etching target film;
- (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas, the metal-containing gas including at least one of tungsten, molybdenum and zirconium;
- (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas;
- and
- (d) after (c), etching the etching target film.
2 more elements
An etching method comprising:
- (a) providing a substrate having an etching target film including a silicon-containing film, and a mask on the etching target film;
- (b) after (a), forming a tungsten-containing deposit on the mask by a first plasma generated from a first processing gas including tungsten hexafluoride gas and a hydrogen-containing gas, the hydrogen-containing gas including at least one of hydrogen gas, hydrocarbon gas, and hydrofluorocarbon gas;
- (c) after (b), deforming or modifying the tungsten-containing deposit by a second plasma generated from a second processing gas different from the first processing gas, the second processing gas including at least one of fluorocarbon gas, hydrofluorocarbon gas, and a halogen-containing gas;
- and
- (d) after (c), etching the etching target film by a third plasma generated from a third processing gas different from the first and second processing gases.
2 more elements
An etching method comprising:
- (a) providing a substrate including an etching target film and a mask on the etching target film;
- (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas;
- (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas, the second processing gas including a halogen-containing gas that contains silicon;
- and
- (d) after (c), etching the etching target film.
2 more elements
Dependencies are inferred from the claim text.