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US 12,588,440 B2Granted
Substrate processing method and substrate processing apparatus for etching using oxidization
AssigneeTokyo Electron Limited
InventorsKazumasa Igarashi, Yamato Tonegawa, Jun Ogawa, Yuki Tanaka
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Abstract
A substrate processing method includes preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate; supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film; and etching the oxide film.
Claims7
A substrate processing method comprising:
- preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate;
- supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film;
- and
- etching the oxide film,
- wherein
- the etching includes
- supplying a gas including a fluorine-containing gas and a basic gas to the target film to convert at least a part of the target film into a reaction product;
- and
- heating the substrate to sublimate the reaction product.
6 more elements
A substrate processing method comprising:
- preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate;
- supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film;
- and
- etching the oxide film,
- wherein
- the oxide film is formed and etched in a same processing container.
3 more elements
Dependencies are inferred from the claim text.