Method of manufacturing semiconductor structure with spacer on photoresist layer

A method, comprising:

• depositing a dielectric layer over a substrate;
• forming a photoresist layer over the dielectric layer;
• patterning the photoresist layer to form through holes and a recess extending from a first one of the through holes to a second one of the through holes;
• conformally depositing a spacer layer over the patterned photoresist layer and lining sidewalls of the through holes and opposite sidewalls of the recess, wherein first and second portions of the spacer layer on the opposite sidewalls of the recess are merged together;
• removing a lateral portion of the spacer layer over the photoresist layer;
• after removing the lateral portion of the spacer layer over the photoresist layer, etching the dielectric layer using the patterned photoresist layer and the spacer layer as an etch mask to form via holes in the dielectric layer;
• and
• forming a plurality of metal vias in the via holes.

A method, comprising:

• forming a first dielectric layer over a substrate, wherein the substrate comprises a transistor;
• forming a first metal layer in the first dielectric layer;
• depositing a second dielectric layer over the first dielectric layer;
• forming a photoresist layer over the second dielectric layer;
• patterning the photoresist layer to form through holes, such that a first portion of the photoresist layer between a first one and a second one of the through holes has a less height than a second portion of the photoresist layer between the first one and a third one of the through holes;
• forming a spacer on the first portion of the photoresist layer;
• performing an etching process on the second dielectric layer to form via holes while the spacer remains covering the first portion of the photoresist layer;
• forming a first metal via in a first one of the via holes and over the first metal layer;
• forming a second metal via in a second one of the via holes and over the first metal layer, wherein the second metal via has a first tip corner pointing toward the first metal via from a top view;
• and
• forming a second metal layer over the first and second metal vias.