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US 12,588,431 B2Granted
Semiconductor device with two-dimensional materials and forming method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Yang Ming Chiao Tung University
InventorsShu-Jui Chang, Shin-Yuan Wang, Yu-Che Huang, Chao-Hsin Chien, Chenming Hu
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Abstract
A method includes following steps. A single-crystalline two-dimensional (2D) semiconductor layer is formed over a substrate. A single-crystalline 2D material layer is epitaxially grown on the single-crystalline 2D semiconductor layer. The single-crystalline 2D material layer is lattice-matched with the single-crystalline 2D semiconductor layer. A semiconductor device is over the single-crystalline 2D semiconductor layer.
Claims20
A method comprising:
- forming a 2D semiconductor layer over a substrate;
- forming a 2D dielectric layer over the 2D semiconductor layer, wherein the 2D dielectric layer is lattice-matched with the 2D semiconductor layer;
- forming a metal gate over the 2D dielectric layer, wherein forming the metal gate comprises epitaxially growing a 2D metal on the 2D dielectric layer, wherein the 2D metal is disposed above the 2D dielectric layer;
- and
- forming source/drain regions on opposite sides of the metal gate.
2 more elements
A method comprising:
- forming a 2D semiconductor layer over a substrate;
- forming a 2D dielectric layer over the 2D semiconductor layer, wherein the 2D dielectric layer is lattice-matched with the 2D semiconductor layer;
- forming a metal gate over the 2D dielectric layer, wherein forming the metal gate comprises epitaxially growing a 2D metal to cover a top surface of the 2D dielectric layer;
- and
- forming source/drain regions on opposite sides of the metal gate.
2 more elements
A method comprising
- forming a 2D semiconductor layer over a substrate;
- forming a 2D dielectric layer over the 2D semiconductor layer, wherein the 2D dielectric layer is lattice-matched with the 2D semiconductor layer;
- forming a metal gate over the 2D dielectric layer, wherein forming the metal gate comprises epitaxially growing a 2D metal on the 2D dielectric layer, wherein the 2D metal is at a higher level than a 2D dielectric layer;
- and
- forming source/drain regions on opposite sides of the metal gate.
2 more elements
Dependencies are inferred from the claim text.