Nonvolatile memory element and method for manufacturing the same
AssigneeSony Semiconductor Solutions Corporation
InventorsHironobu Tanigawa, Eiji Kariyada, Hiroki Tanabe
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Abstract
A variable-resistance nonvolatile memory element 11 of the present disclosure has a stack 30 including at least a magnetization fixed layer 31, an intermediate layer 32, and a storage layer 33, and a nonmagnetic material 36 is dispersed in at least one of the magnetization fixed layer 31 and the storage layer 33.
Claims14
A variable-resistance nonvolatile memory element comprising a stack including at least a magnetization fixed layer, an intermediate layer, and a storage layer, wherein
- a nonmagnetic material is dispersed in at least one of the magnetization fixed layer and the storage layer, and
- the nonmagnetic material is dispersed in the magnetization fixed layer.
A variable-resistance nonvolatile memory element comprising a stack including at least a magnetization fixed layer, an intermediate layer, and a storage layer, wherein
- a nonmagnetic material is dispersed in at least one of the magnetization fixed layer and the storage layer, and
- a write voltage dependency of a write error rate is steeper than a write voltage dependency of a write error rate in a different nonvolatile memory element comprising a second stack including at least a second magnetization fixed layer, a second intermediate layer, and a second storage layer in which the nonmagnetic material is not dispersed in the second magnetization fixed layer.
Dependencies are inferred from the claim text.