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US 12,588,422 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Chen-Yi Weng, Ching-Hua Hsu, Jing-Yin Jhang
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Abstract
A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a metal interconnection in the IMD layer, forming a magnetic tunneling junction (MTJ) on the metal interconnection, and performing a trimming process to shape the MTJ. Preferably, the MTJ includes a first slope and a second slope and the first slope is less than the second slope.
Claims6
A semiconductor device, comprising:
- an inter-metal dielectric (IMD) layer on a substrate;
- a metal interconnection in the IMD layer;
- a bottom electrode on the metal interconnection;
- a magnetic tunneling junction (MTJ) on the bottom electrode, wherein a sidewall of the MTJ comprises a first slope and a second slope, the first slope is less than the second slope, and the MTJ comprises:
- a pinned layer on the bottom electrode, wherein the bottom electrode and the pinned layer comprise the first slope.
2 more elements
Dependencies are inferred from the claim text.