High-density micro-LED arrays with reflective sidewalls

A method of fabricating a micro-LED structure, the method comprising:

• performing a mesa etch on an LED epilayer to form a first level comprising p-doped Gallium Nitride (GaN) and a second level comprising n-doped GaN;
• forming light-emitting diodes (LEDs) disposed on a backplane, each LED having:
• a first electrode coupled to a second electrode on the backplane;
• an LED epilayer having a first side coupled to the first electrode and sidewalls extending in a direction away from the backplane;
• a reflective coating disposed over the sidewalls of the LED epilayer;
• and
• a first dielectric layer between the LED epilayer and the reflective coating;
• forming isolation structures, the isolation structures defining wells of subpixels, each well including a respective LED between adjacent isolation structures;
• and
• forming the subpixels, each subpixel having a color conversion material disposed in the wells.

A display comprising:

• a backplane substrate;
• a plurality of pixels mounted to the backplane substrate, wherein each of the plurality of pixels comprises a plurality of subpixels, and each of the plurality of subpixels comprises an LED disposed on the backplane, each LED comprising:
• a first electrode coupled to a second electrode on the backplane;
• an LED epilayer having a first side coupled to the first electrode and sidewalls extending in a direction away from the backplane;
• a reflective coating disposed over the sidewalls of the LED epilayer;
• a first dielectric layer between the LED epilayer and the reflective coating;
• isolation structures, the isolation structures defining wells of subpixels, each well including a respective subpixel between adjacent isolation structures;
• luminescence regions formed on the LED epilayers;
• and
• second reflective coatings between the luminescence regions and the isolation structures.