Infrared LED element

An infrared LED element having a peak wavelength in a range from 1000 nm to 2000 nm inclusive, the infrared LED element comprising:

• a support substrate that exhibits electrical conductivity;
• a reflection layer formed on top of the support substrate, the reflection layer being made of a metallic material;
• an insulating layer formed on top of the reflection layer;
• a contact layer formed on top of the insulating layer, the contact layer being made of GaxIn1-xAsyP1-y of a first conduction type, where 0≤x<0.33 and 0≤y<0.70;
• a first cladding layer of the first conduction type, the first cladding layer being formed on top of the contact layer;
• an active layer formed on top of the first cladding layer;
• a second cladding layer of a second conduction type different from the first conduction type, the second cladding layer being formed on top of the active layer;
• a first electrode formed at each of a plurality of places in the insulating layer by passing through the insulating layer in a first direction orthogonal to a main surface of the support substrate, the first electrode connecting the contact layer to the reflection layer;
• and
• a second electrode formed on top of the second cladding layer, wherein
• the first electrode is made of a metallic material having a lower reflectance for light emitted from the active layer than the reflection layer, and
• the contact layer is in direct contact with the first electrode.