Composite cathode contact for monolithically integrated micro-LEDs, mini-LEDs and LED arrays

A light emitting diode (LED) device comprising:

• a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the P-type layer having a top surface and at least one side surface, the active layer having a top surface and at least one side surface, and the N-type layer having a top surface and at least one side surface, the mesa having a top surface and at least one side wall, the at least one side wall formed by the N-type layer, the active layer, and the P-type layer, the at least one side wall defining a trench having a bottom surface;
• a dielectric layer disposed along the side surface of the P-type layer, the side surface of the active layer, a first portion of the side surface of the N-type layer, and on the top surface of the mesa;
• a zinc oxide layer on the dielectric layer, on a second portion of the side surface of the N-type layer, and on the bottom surface of the trench, the dielectric layer disposed between the zinc oxide layer and the side surface of the P-type layer, the side surface of the active layer, and the first portion of the side surface of the N-type layer;
• a cathode layer on the zinc oxide layer;
• and
• a p-contact on the top surface of the mesa.