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US 12,588,320 B2Granted
Micro light emitting diode, micro light emitting device, and display
AssigneeXiamen San'an Optoelectronics Co., Ltd.
InventorsYenchin Wang, Jinghua Chen, Huanshao Kuo, Shao-Hua Huang, Shuiqing Li
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Abstract
A micro light emitting diode includes a semiconductor unit having a first surface and a second surface, and including a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first surface has a roughened portion that is located within a projection of the active layer. The projection of the roughened portion has a projected area not greater than that of the active layer. A micro light emitting device and a display are also disclosed.
Claims14
A micro light emitting diode comprising:
- a semiconductor unit having a first surface and a second surface that is opposite to said first surface, and including a first type semiconductor layer, an active layer, and a second type semiconductor layer that are disposed on one another in such order from said first surface to said second surface, said first type semiconductor layer including a flange portion;
- and
- an insulation layer,
- wherein said first surface has a roughened portion, said roughened portion having a projection that is projected on an imaginary plane along a projection direction perpendicular to said first surface, and that is located within a projection of said active layer on the imaginary plane, the projection of said roughened portion having a projected area not greater than that of said active layer and not less than 60% of that of said active layer,
- wherein said semiconductor unit is divided into a first section that has said first surface and said flange portion, and a second section that is connected to said first section and has said second surface,
- wherein said insulation layer covers said second surface of said semiconductor unit, a side wall of said second section, and a bottom surface of said flange portion of said first section,
- wherein said bottom surface of said flange portion is opposite to said first surface,
- wherein said bottom surface of said flange portion intersects said side wall of said second section and extends outwardly from an end of said side wall of said second section, and
- wherein an intersection of said bottom surface of said flange portion and said end of said side wall of said second section is covered by said insulation layer, and said intersection is located within a projection of said semiconductor unit on an imaginary plane in which said intersection lies.
6 more elements
Dependencies are inferred from the claim text.