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AssigneePoro Technologies Ltd
InventorsTongtong Zhu, Alex Yudin, Simon Hammersley
Estimating the term…
A display device comprises a light emitting diode (LED) which includes a porous semiconductor material, wherein the device comprises a pixel comprising a plurality of subpixels each having a light-emitting layer. A first subpixel has a first light-emitting layer having a first area A1, and a second subpixel has a second light-emitting layer having a second area A2 different from the first area A1. The first subpixel is configured to emit at a first peak wavelength, and the second subpixel is configured to emit at a second peak wavelength different from the first peak wavelength. A method of controlling this display device and a method of manufacturing said display device are also provided.
A display device comprising a light emitting diode (LED) which includes a porous semiconductor material,
Dependencies are inferred from the claim text.
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Having quantum effect structures or superlattices, e.g. tunnel junctions: within the light-emitting regions, e.g. having quantum confinement…
Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00: comprising multiple light-emitting…
For presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged…:…
Using electroluminescent panels: semiconductive, e.g. using light-emitting diodes [LED]
About 15 years 9 months of term left · ends 28 Jul 2042 (estimated)
This application is a National Stage Application of PCT/GB2022/052001, filed Jul. 28, 2022, which claims benefit of priority to British Patent Application Nos. 2110884.0, filed Jul. 28, 2021; 2110976.4, filed Jul. 29, 2021; 2201161.3, filed Jan. 28, 2022; 2201163.9, filed Jan. 28, 2022; 2201493.0, filed Feb. 4, 2022; 2203367.4, filed Mar. 10, 2022; 2205122.1, filed Apr. 7, 2022; 2205604.8, filed Apr. 14, 2022; 2206521.3, filed May 4, 2022; and 2209054.2, filed Jun. 20, 2022, and which applications are incorporated herein by reference. To the extent appropriate, a claim of priority is made to each of the above disclosed applications.
The invention relates to a display device comprising a variable-wavelength light emitting diode (LED), a method of controlling a display device, and a method of manufacturing a display device.
III-V semiconductor materials are of particular interest for semiconductor device design, in particular the family of III-nitride semiconductor materials.
Embodiments of the invention will now be described with reference to the figures, in which:
FIG. 1 illustrates a porous template suitable for an LED according to the present invention;
FIGS. 2-18 illustrate the steps of manufacturing an LED according to a preferred embodiment of the present invention;
FIG. 1 illustrates a porous template suitable for an LED according to the present invention.
The porous template comprises a porous region of III-nitride material on a substrate, with a non-porous layer of III-nitride material arranged over the top surface of the porous region. Optionally there may be further layers of III-nitride material between the substrate and the porous region.
As described in more detail below, the porous region may be provided by epitaxially growing an n-doped region of III-nitride material and then an undoped layer of III-nitride material, and porosifying the n-doped region using the porosification process as set out in international patent applications PCT/GB2017/052895 (published as WO2019/063957) and PCT/GB2019/050213 (published as WO2019/145728).