Optoelectronic device comprising three-dimensional semiconductor elements and method for manufacturing said device
AssigneeAledia
InventorsOlga Kryliouk, Jérôme Napierala
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Abstract
A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.
Claims26
A method for manufacturing an optoelectronic device comprising:
- forming in a first reactor, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and comprising a top;
- and
- forming in a second reactor, different from the first reactor, by molecular-beam epitaxy, MBE, at a pressure in the range from 4*10−3 mPa to 1 mPa, for each semiconductor element, an active area only on said top comprising at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.
A method for manufacturing an optoelectronic device comprising:
- forming in a first reactor, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and comprising a top;
- and
- forming in a second reactor, different from the first reactor, by remote plasma chemical vapor deposition, RPCVD, at a pressure in the range from 400 Pa to 1333 Pa, for each semiconductor element, an active area only on said top comprising at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element,
- wherein the MOCVD step is performed at a temperature in the range from 900° C. to 1065° C. and the step for forming the active areas is performed at a temperature in the range from 570° C. to 800° C.
Dependencies are inferred from the claim text.