Photoelectric conversion apparatus, photoelectric conversion system, and movable object

A photoelectric conversion apparatus comprising:

• a first avalanche diode including a first semiconductor region of a first conductivity type in which majority carriers are charge carriers of the same conductivity type as signal charge;
• and a second avalanche diode including a second semiconductor region of the first conductivity type and arranged to be adjacent to the first avalanche diode, wherein
• a first isolation portion is arranged between the first semiconductor region and the second semiconductor region,
• the first isolation portion is constituted by a third semiconductor region of the first conductivity type,
• a seventh semiconductor region of a second conductivity type being a conductivity type different from the first conductivity type is arranged at a position overlapped with the third semiconductor region in plan view and deeper than the third semiconductor region,
• the third semiconductor region and the seventh semiconductor region constitute a P-N junction, and
• an impurity concentration of the third semiconductor region is lower than an impurity concentration of the seventh semiconductor region.