Image sensor with shared extrinsic region

An image sensor, comprising:

• a substrate;
• a plurality of photodiodes in the substrate;
• a pixel separating pattern in the substrate and configured to separate the plurality of photodiodes;
• a first active pattern in the substrate and configured to at least partially overlap a first photodiode and a second photodiode from among the plurality of photodiodes, the first photodiode being adjacent to the second photodiode in a first direction;
• a second active pattern in the substrate and configured to at least partially overlap a third photodiode and a fourth photodiode from among the plurality of photodiodes, the third photodiode being adjacent to the fourth photodiode in the first direction, the third photodiode and the fourth photodiode being adjacent to the first photodiode and the second photodiode in a second direction, the second direction crossing the first direction;
• a source follower gate on the first active pattern and the second active pattern and configured to at least partially overlap the second photodiode and the fourth photodiode;
• a first selection gate on the first active pattern and configured to at least partially overlap the first photodiode;
• and
• a second selection gate on the second active pattern and configured to at least partially overlap the third photodiode,
• wherein the pixel separating pattern comprises:
• a first pixel separating pattern and a second pixel separating pattern disposed between the first photodiode and the second photodiode, the first pixel separating pattern and the second pixel separating pattern being separated from each other;
• and
• a third pixel separating pattern and a fourth pixel separating pattern disposed between the third photodiode and the fourth photodiode, the third pixel separating pattern and the fourth pixel separating pattern being separated from each other,
• wherein the source follower gate comprises:
• a first source follower gate at least partially overlapping the first active pattern;
• and
• a second source follower gate at least partially overlapping the second active pattern,
• wherein the first active pattern comprises:
• a first extrinsic region disposed between the first pixel separating pattern and the second pixel separating pattern;
• a third extrinsic region on a second side of the first selection gate;
• and
• a fourth extrinsic region on a second side of the first source follower gate,
• wherein the first extrinsic region and the third extrinsic region are on respective sides of the first selection gate in the second direction,
• wherein the first extrinsic region and the fourth extrinsic region are on respective sides of the first source follower gate in the first direction, and
• wherein the second active pattern comprises a second extrinsic region disposed between the third pixel separating pattern and the fourth pixel separating pattern.

An image sensor, comprising:

• a substrate comprising a first side and a second side facing each other;
• a plurality of photodiodes in the substrate;
• a pixel separating pattern separating the plurality of photodiodes in the substrate;
• an active pattern on an inner side from the first side of the substrate and configured to at least partially overlap a first photodiode and a second photodiode from among the plurality of photodiodes, the first photodiode being adjacent to the second photodiode;
• a selection gate on the active pattern and configured to at least partially overlap the first photodiode;
• a source follower gate spaced from the selection gate on the active pattern and configured to at least partially overlap the second photodiode;
• and
• a micro lens on the second side of the substrate,
• wherein the pixel separating pattern comprises a first pixel separating pattern and a second pixel separating pattern disposed between the first photodiode and the second photodiode, the first pixel separating pattern being spaced from the second pixel separating pattern, and
• wherein the active pattern comprises:
• a first extrinsic region disposed between the first pixel separating pattern and the second pixel separating pattern;
• a second extrinsic region on a second side of the selection gate and at least partially overlapping the first photodiode;
• and
• a third extrinsic region on a second side of the source follower gate and at least partially overlapping the second photodiode.