Electrostatic discharge protection circuit using GaN-based devices
AssigneeUnited Microelectronics Corp.
InventorsYu-Hsuan Chang, Ching-Wei Li, Jih-San Lee, Tien-Hao Tang
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AssigneeUnited Microelectronics Corp.
InventorsYu-Hsuan Chang, Ching-Wei Li, Jih-San Lee, Tien-Hao Tang
Estimating the term…
An ESD protection circuit using GaN devices, with an ESD protection block including a first sub-block and a second sub-block. The first sub-block includes a trigger coupled to a gate of a power HEMT, a 2DEG resistor coupled to another terminal of the trigger, a LV-HEMT with a gate coupled to another terminal of the trigger and one terminal of the 2DEG resistor and with a source coupled to the gate of the power HEMT and the terminal of the trigger, and a lateral FER coupled to the gate of the LV-HEMT, the another terminal of the trigger and one terminal of the 2DEG resistor, wherein the second sub-block is provided with a device configuration completely symmetrical to the first sub-block, and corresponding devices of the two sub-blocks are coupled with each other.
An electrostatic discharge (ESD) protection circuit using GaN devices, comprising:
Dependencies are inferred from the claim text.