Electronic device

An electronic device, comprising:

• a substrate;
• a first transistor disposed on the substrate, wherein the first transistor comprises a first semiconductor layer and a gate electrode;
• a first insulating layer disposed between the first semiconductor layer and the gate electrode;
• a second insulating layer disposed on the first insulating layer, wherein the first semiconductor layer and the gate electrode are located between the substrate and the second insulating layer;
• a barrier layer disposed on the second insulating layer;
• and
• a second transistor disposed on the barrier layer and comprising a second semiconductor layer, wherein the barrier layer is disposed between the second semiconductor layer and the second insulating layer,
• wherein the second transistor further comprises another gate electrode, an edge of the barrier layer shrinks inwardly from an edge of the another gate electrode adjacent to the edge of the barrier layer by a distance in a range from 0 micrometer to 1 micrometer.