Display panel and mobile terminal
AssigneeWuhan China Star Optoelectronics Technology Co., Ltd.
InventorsFei Ai, Chengzhi Luo
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Abstract
The present disclosure provides a display panel and a mobile terminal, the display panel includes a substrate and a thin film transistor layer, the thin film transistor layer including a semiconductor layer, an insulating layer and a first metal layer, the insulating layer being disposed on the substrate and the semiconductor layer and covering the semiconductor layer, the first metal layer being disposed on the insulating layer, the insulating layer including at least one via hole, the first metal layer being connected to the semiconductor layer through the via hole, and an included angle between a sidewall of the via hole and a bottom surface of the insulating layer being greater than or equal to 85 degrees and less than or equal to 90 degrees.
Claims20
A display panel, comprising:
- a substrate;
- a thin film transistor layer disposed on the substrate, wherein the thin film transistor layer comprises a semiconductor layer, an insulating layer, and a first metal layer stacked on the substrate, the insulating layer is disposed on the substrate and the semiconductor layer and covers the semiconductor layer, and the first metal layer is disposed on the insulating layer;
- a spacing layer disposed on a side of the insulating layer away from the substrate, wherein the spacing layer comprises at least one open slot penetrating through the spacing layer;
- a flat layer, a passivation layer, and a first electrode layer stacked on the spacing layer, wherein a first connection via hole penetrating through the flat layer and the passivation layer is provided in the display panel, the at least one open slot comprises a first open slot in communication with the first connection via hole, the first connection via hole is in communication with the first open slot, the first metal layer comprises a first signal line disposed in the first open slot, the first electrode layer comprises a bridge section, one end of the bridge section is connected with the first signal line through the first connection via hole;
- and
- wherein the insulating layer comprises at least one via hole, the first metal layer is connected to the semiconductor layer through the via hole, an included angle between a sidewall of the via hole and a bottom surface of the insulating layer is greater than or equal to 85 degrees and less than or equal to 90 degrees, and an included angle between a sidewall of the first connection via hole and the bottom surface of the flat layer is greater than or equal to 85 degrees and less than or equal to 90 degrees.
A mobile terminal, comprising a terminal body and a display panel, the terminal body being integrated with the display panel, and the display panel comprising:
- a substrate;
- a thin film transistor layer disposed on the substrate, wherein the thin film transistor layer comprises a semiconductor layer, an insulating layer, and a first metal layer stacked on the substrate, the insulating layer is disposed on the substrate and the semiconductor layer and covers the semiconductor layer, and the first metal layer is disposed on the insulating layer;
- a spacing layer disposed on a side of the insulating layer away from the substrate, wherein the spacing layer comprises at least one open slot penetrating through the spacing layer;
- a flat layer, a passivation layer, and a first electrode layer stacked on the spacing layer, wherein a first connection via hole penetrating through the flat layer and the passivation layer is provided in the display panel, the at least one open slot comprises a first open slot in communication with the first connection via hole, the first connection via hole is in communication with the first open slot, the first metal layer comprises a first signal line disposed in the first open slot, the first electrode layer comprises a bridge section, one end of the bridge section is connected with the first signal line through the first connection via hole;
- and
- wherein the insulating layer comprises at least one via hole, the first metal layer is connected to the semiconductor layer through the via hole, an included angle between a sidewall of the via hole and a bottom surface of the insulating layer is greater than or equal to 85 degrees and less than or equal to 90 degrees, and an included angle between a sidewall of the first connection via hole and the bottom surface of the flat layer is greater than or equal to 85 degrees and less than or equal to 90 degrees.
Dependencies are inferred from the claim text.