Thin-film transistor and manufacturing method thereof, and display substrate

A display substrate, comprising a thin-film transistor, a gate electrode of the thin-film transistor being connected to a gate line of the display substrate, and an extending direction of the gate electrode being perpendicular or substantially perpendicular to an extending direction of the gate line,

• the thin-film transistor comprising:
• a base substrate;
• the gate electrode on the base substrate;
• an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate;
• and
• a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode,
• wherein the active layer comprises a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to the extending direction of the gate electrode;
• wherein the active layer comprises a first boundary and a second boundary that are parallel or substantially parallel to the extending direction of the gate electrode, the gate electrode comprises a third boundary and a fourth boundary that are parallel or substantially parallel to the extending direction of the gate electrode;
• and the shortest distance between the first boundary and the third boundary is b, and b is greater than 5 μm;
• wherein orthographic projections of the first electrode and the second electrode onto the base substrate do not overlap with the orthographic projection of the gate electrode onto the base substrate;
• wherein in a region where the orthographic projection of the active layer onto the base substrate overlaps with the orthographic projection of the gate electrode onto the base substrate, a width of the gate electrode is greater than a width of the gate line along the extending direction of the gate electrode.

A method for manufacturing a thin-film transistor, comprising:

• providing a base substrate;
• forming a gate electrode on the base substrate;
• forming an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate;
• and
• forming a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode,
• wherein the active layer comprises a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode;
• wherein the extending direction of the gate electrode is perpendicular or substantially perpendicular to an extending direction of a gate line in a display substrate comprising the thin-film transistor;
• wherein the active layer comprises a first boundary and a second boundary that are parallel or substantially parallel to the extending direction of the gate electrode, the gate electrode comprises a third boundary and a fourth boundary that are parallel or substantially parallel to the extending direction of the gate electrode;
• and the shortest distance between the first boundary and the third boundary is b, and b is greater than 5 μm;
• wherein orthographic projections of the first electrode and the second electrode onto the base substrate do not overlap with the orthographic projection of the gate electrode onto the base substrate;
• wherein in a region where the orthographic projection of the active layer onto the base substrate overlaps with the orthographic projection of the gate electrode onto the base substrate, a width of the gate electrode is greater than a width of the gate line along the extending direction of the gate electrode.