Display apparatus comprising thin film transistor

A method for manufacturing a display apparatus comprising:

• providing a first signal line, a first gate electrode, a first source electrode, a first drain electrode, a second gate electrode, a second drain electrode, and a first portion and a second portion of a second signal line on a substrate;
• providing a gate insulating film on the first signal line, on the first gate electrode, on the first source electrode, on the first drain electrode, on the second gate electrode, on the second drain electrode, and on the first portion and the second portion of the second signal line, wherein the gate insulating film is provided after forming the first signal line, the first gate electrode, the first source electrode, the first drain electrode, the second gate electrode, the second drain electrode, and the first portion and the second portion of the second signal line;
• providing a first active layer and a second active layer on the gate insulating film, wherein at least a portion of the first active layer is overlapped with the first gate electrode, and at least a portion of the second active layer is overlapped with the second gate electrode after forming the gate insulating film;
• selectively providing conductivity to the first active layer and the second active layer to make conducting regions in the first active layer and the second active layer;
• providing a protection layer on the first active layer and the second active layer;
• and
• providing a first connection electrode and a first electrode of a display device on the protection layer after forming the protection layer,
• wherein the first connection electrode connects the first portion of the second signal line with the second portion of the second signal line,
• wherein the first gate electrode is connected with one of the first signal line and the second signal line,
• one of the first source electrode and the first drain electrode is connected with the second gate electrode,
• another one of the first source electrode and the first drain electrode is connected with the other of the first signal line and the second signal line, and
• wherein the first active layer is disposed on the gate insulating film, and the first active layer contacts the first source electrode and the first drain electrode via contact holes formed in the gate insulating film.