Backsides subtractive M1 patterning with backside contact repair for tight N2P space

A microelectronic structure comprising:

• a first nanosheet transistor including a first source/drain and a second nanosheet transistor including a second source drain;
• a first backside metal line that includes a first backside contact that is connected to the first source drain, wherein the first backside metal line has a first width as measure along a bottom surface of the first backside metal line, wherein the first backside metal line has a second width as measure along a top surface of the first metal line contact, wherein the first width and the second width are measured through a source/drain region in parallel to a gate direction;
• a second backside metal line that includes a second backside contact that is connected to the second source drain, wherein the second backside metal line has a third width as measure along a bottom surface of the second backside metal line, wherein the second backside metal line has a fourth width as measure along a top surface of the second backside metal line, wherein the third width and the fourth width are measured through the source/drain region in parallel to the gate direction, wherein the first width is larger than the second width and the third width is larger than the fourth width;
• a shallow trench isolation layer located around the first backside contact;
• and
• a backside metal line cut located between the first backside metal line and the second backside metal line, wherein the backside metal line cut extends into the first backside contact.