Semiconductor device having different size active regions and method of making

A semiconductor device, comprising:

• a first cell in a first row, wherein the first row extends in a first direction, the first cell having a first cell height measured in a second direction perpendicular to the first direction, and the first cell comprises a first active region having a first width in the second direction;
• a second cell in the first row, wherein the second cell has a second cell height measured in the second direction, the second cell height is less than the first cell height, and the second cell comprises:
• a second active region having the first width, and
• a third active region having a second width measured in the second direction,
• wherein the second width is different from the first width;
• and
• a third cell in a second row, wherein the third cell comprises a fourth active region having the second width, and the third cell directly abuts the first cell.

A semiconductor device, comprising:

• a first cell in a first row, wherein the first row extends in a first direction, the first cell having a first cell height measured in a second direction perpendicular to the first direction;
• a second cell in the first row, wherein the second cell has a second cell height measured in the second direction, the second cell height is less than the first cell height, and the second cell comprises:
• a first active region, in a substrate, having a first width measured in the second direction, and
• a second active region, in the substrate, having a second width measured in the second direction, wherein the second width is different from the first width;
• and
• a conductive contact structure extending through the substrate.