Forming wrap around contact with self-aligned backside contact
AssigneeInternational Business Machines Corporation
InventorsShravana Kumar Katakam, Tao Li, Ruilong Xie, Nicholas Anthony Lanzillo
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Abstract
One or more systems, devices, and/or methods of fabrication provided herein relate to reduced resistance between contacts and source/drain epis. According to one embodiment, a semiconductor device can comprise a source/drain region comprising a top portion, a sidewall portion and a bottom portion, a dielectric bar located adjacent to the source/drain region, and a contact in direct contact with the top portion, the sidewall portion and the bottom portion of the source/drain region and with the dielectric bar.
Claims13
A semiconductor device comprising:
- a source/drain region comprising a top portion, a first sidewall portion, a second sidewall portion, and a bottom portion;
- a dielectric bar in contact with the second sidewall portion of the source/drain region;
- and
- a contact in direct contact with the top portion, the first sidewall portion and the bottom portion of the source/drain region and with the dielectric bar.
A semiconductor device comprising:
- a source/drain region located at a boundary between a first FET and a second FET and in contact with a dielectric bar on one side;
- and
- a contact that surrounds the source/drain region on at least three sides.
Dependencies are inferred from the claim text.