Insulated gate bipolar transistor (IGBT) semiconductor device with reduced turn-on loss

A semiconductor device, comprising:

• a first electrode;
• a semiconductor part including:
• a first semiconductor region located on the first electrode, the first semiconductor region being of a p-type,
• a second semiconductor region located on the first semiconductor region, the second semiconductor region being of an n-type,
• a third semiconductor region located on the second semiconductor region, the third semiconductor region being of the p-type,
• a fourth semiconductor region located on the third semiconductor region, the fourth semiconductor region being of the n-type, and
• a fifth semiconductor region located on the third semiconductor region, the fifth semiconductor region being of the p-type;
• a second electrode located on the semiconductor part;
• a structure body including a gate part and a dummy part alternately arranged in a second direction perpendicular to a first direction, the gate part including at least one gate electrode, the dummy part including a first dummy electrode and a second dummy electrode, the first direction being from the first semiconductor region toward the second semiconductor region;
• and
• an insulating part located between the gate electrode and the semiconductor part, the gate part being located in the fourth semiconductor region, the first dummy electrode being located between the gate part and the second dummy electrode, the first dummy electrode being adjacent to the second dummy electrode without the fourth semiconductor region between the first dummy electrode and the second dummy electrode, the gate electrode being electrically insulated from the second electrode, the first dummy electrode being electrically insulated from the second electrode, the first dummy electrode being electrically insulated from the second dummy electrode.