Radio frequency switch
AssigneeSTMicroelectronics (Rousset) SAS
InventorsPascal Fornara, Christian Rivero, Franck Julien
Life of this patent
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Abstract
A method of manufacturing a radio frequency switch includes the steps of: forming a first silicide layer on a second conductive or semiconductor layer; forming a third insulating layer on the first layer; forming a cavity in the third insulating layer reaching the first silicide layer; forming a fourth metal layer in the cavity in contact with the first silicide layer; performing a non-oxidizing annealing; and filling the cavity with a conductive material. The first silicide layer is provided on one or more of the gate, source, and drain of a transistor forming the radio frequency switch.
Claims19
A method of manufacturing a device comprising a radio frequency switch, the method comprising:
- (a) forming a first silicide layer on a second conductive or semiconductor layer;
- (b) forming a third insulating layer on the first silicide layer;
- (c) forming a cavity in the third insulating layer that extends to reach the first silicide layer;
- (d) forming a fourth metal layer in the cavity in contact with the first silicide layer;
- (e) performing a non-oxidizing annealing of the fourth metal layer in the cavity in contact with the first silicide layer for a duration of time in a range from 30 seconds to 10 minutes and at a temperature in a range from 700° C. to 800° C. in order to form an alloy of the fourth metal layer and the first silicide layer suited to decrease access resistance for the radio frequency switch for switching operations at radio frequencies;
- and
- (f) filling the cavity with a conductive material in contact with said alloy.
A method of manufacturing a device comprising a radio frequency switch, the method comprising:
- (a) forming a first cobalt-silicide layer on a second conductive or semiconductor layer;
- (b) forming a third insulating layer on the first cobalt-silicide layer;
- (c) forming a cavity in the third insulating layer that extends to reach the first cobalt-silicide layer;
- (d) forming a fourth titanium layer in the cavity in contact with the first cobalt-silicide layer;
- (e) performing a non-oxidizing annealing to cause an intermixing of chemical elements between the fourth titanium layer and the first cobalt-silicide layer to form an alloy region;
- and
- (f) filling the cavity with a conductive material in contact with the alloy region.
Dependencies are inferred from the claim text.