Semiconductor device and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorShogo Ogawa
Life of this patent
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Abstract
There is provided a semiconductor device including: an n-type semiconductor substrate having a first main surface and a second main surface on an opposite side of the first main surface; an n-type semiconductor layer arranged on the first main surface of the semiconductor substrate; a pair of trenches formed at a distance from each other on a surface of the semiconductor layer on an opposite side of the semiconductor substrate; a pair of gate electrodes buried in the pair of trenches; a gate insulating film interposed between the gate electrodes and the semiconductor layer; a source electrode formed on the surface of the semiconductor layer on the opposite side of the semiconductor substrate; and a drain electrode formed on the second main surface of the semiconductor substrate.
Claims8
A semiconductor device comprising:
- an n-type semiconductor substrate having a first main surface and a second main surface on an opposite side of the first main surface;
- an n-type semiconductor layer arranged on the first main surface of the semiconductor substrate;
- a pair of trenches formed at a distance from each other on a surface of the semiconductor layer on an opposite side of the semiconductor substrate;
- a pair of gate electrodes buried in the pair of trenches;
- a gate insulating film interposed between the gate electrodes and the semiconductor layer;
- a source electrode formed on the surface of the semiconductor layer on the opposite side of the semiconductor substrate;
- and
- a drain electrode formed on the second main surface of the semiconductor substrate,
- wherein the source electrode includes:
- a first electrode that makes Schottky contact with a first region, which is a portion of an inter region of the pair of gate electrodes in the surface of the semiconductor layer, and
- a second electrode that makes ohmic contact with a second region different from the first region in the inter region,
- wherein a material composing the first electrode is different from a material composing the second electrode, and
- wherein a bottom surface of the first electrode makes contact with the surface of the semiconductor layer, a bottom surface of the second electrode makes contact with the surface of the semiconductor layer, and the bottom surface of the first electrode is flush with the bottom surface of the second electrode.
A method of manufacturing a semiconductor device, comprising:
- forming an n-type semiconductor layer on an n-type semiconductor substrate;
- forming a pair of trenches at a distance from each other on a surface of the semiconductor layer on an opposite side of the semiconductor substrate;
- burying a pair of gate electrodes in the pair of trenches via a gate insulating film;
- forming a source electrode on the surface of the semiconductor layer on the opposite side of the semiconductor substrate;
- and
- forming a drain electrode on a main surface of the semiconductor substrate,
- wherein the forming the source electrode includes:
- forming a first electrode that makes Schottky contact with a first region, which is a portion of an inter region of the pair of gate electrodes in the surface of the semiconductor layer;
- and
- forming a second electrode that makes ohmic contact with a second region different from the first region in the inter region,
- wherein a material composing the first electrode is different from a material composing the second electrode, and
- wherein a bottom surface of the first electrode makes contact with the surface of the semiconductor layer, a bottom surface of the second electrode makes contact with the surface of the semiconductor layer, and the bottom surface of the first electrode is flush with the bottom surface of the second electrode.
Dependencies are inferred from the claim text.